page . 1 march 2,2015-rev.02 PJ2301 features ? r ds(on) , v gs @-1.8v,i d @-1.5a=200m ? r ds(on) , v gs @-4.5v,i d @-2.2a=105m ? advanced trench process technology ? high density cell design for ultra low on-resistance ? specially designed for dc/dc converters ? low gate charge ? lead free in compliance with eu rohs 2011/65/eu directive ? green molding compound as per iec61249 std. . (halogen free) mechanical data ? case : sot-23 package ? terminals : solderable per mil-std-750,method 2026 ? approx. weight: 0.0003 ounces, 0.0084 grams ? marking : 01 20v p-channel enhancement mode mosfet maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted ) notes: 1. mounted on minimum pad layout. 2. mounted on 48cm 2 fr-4 pcb board. . parameter symbol limit units drain-source voltage v ds -20 v gate-source voltage v gs + 8v continuous drain current (notes 1) steady-state steady-state t < 5s t a =25 o c t a =70 o c t a =25 o c i d -1.75 -1.4 -2 a pulsed drain current (notes 1) i dm 10 a power dissipation (notes 2) t a =25 o c t a =70 o c p d 700 450 mw typical thermal resistance (notes 1) r ja 175 o c/w typical thermal resistance (notes 1) r jl 65 o c/w operating junction and storage temperature range t j ,t stg -55 to + 150 o c 0.120(3.04) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0.020(0.50) 0.013(0.35) 0.044(1.10) 0.035(0.90) 0.006(0.15)min. 0.008(0.20) 0.003(0.08) 0.004(0.10) 0.000(0.00)
page . 2 march 2,2015-rev.02 PJ2301 electrical characteristics parameter symbol test condition min. typ. max. units static drain-source breakdown voltage bv dss v gs =0v, i d = -250 a-20--v gate threshold voltage v gs(th) v ds =v gs , i d = -250 a -0.5 -0.7 -0.9 v drain-source on-state resistance r ds(on) v gs = -4.5v, i d = -2.2a - 90 105 m drain-source on-state resistance r ds(on) v gs = -2.5v, i d = -1.7a - 120 140 drain-source on-state resistance r ds(on) v gs = -1.8v, i d = -1.5a - 170 200 zero gate voltage drain current i dss v ds = -16v, v gs =0v - - -1 a gate body leakage i gss v gs = + 8v, v ds =0v - - + 100 na dynamic forward transconductance g fs v ds = -10v, i d = -1.7a 4 6 - s total gate charge q g v ds = -10v, i d = -2.2a v gs = -4.5v -4- nc gate-source charge q gs -0.5- gate-drain charge q gd -1- tur n-on ti me t on v dd = -16v , i d = -2.2a, v gs = -4.5v r gen =2.5 -8- ns tur n-off ti m e t off -35- tur n-on ri s e ti m e t r -15- tur n-off f a ll ti m e t f -25- input capacitance c iss v ds = -10v, v gs =0v f=1.0mh z - 200 300 pf output capacitance c oss -90140 reverse transfer capacitance c rss -4060 gate resistance r g v ds =0v, v gs =0v f=1.0mh z -12- source-drain diode max. diode forward current i s ----2a diode forward voltage v sd i s = -1a, v gs =0v - -0.79 -1 v body-diode reverse recovery ti me t rr i s = -2.1a, di/dt=100a/ s -30-ns body-diode reverse recovery charge q rr -12-nc
page . 3 march 2,2015-rev.02 PJ2301 characteristic curves 90 100 110 120 130 25 50 75 100 125 150 t j , junction temperature ( ) i d =-2.1a vgs=-4.5v r ds (on), drain-to-source resistance (m ? ) 0 1 2 3 4 5 6 7 012345 -v ds -drain-to-source voltage (v) -1.2v -1.4v -1.6v -1.8v -i d - drain current(a) -3.0v -2.4v -2.2v -2.0v t j =25 fig.3 transfer characteristics fig.2 on-region characteristics 0.05 0.075 0.1 0.125 0.15 0.175 0.2 0.5 1.5 2.5 3.5 -i d , drain current (a) t j = 25c r ds (on), drain-to-source resistance ( ? ) v gs = -2.5v v gs = -4.5v fig.4 on-resistance vs. drain current and gate voltage fig.5 on-resistance vs. gate-source voltage fig.1 capacitance variation 0 1 2 3 4 5 0 0.5 1 1.5 2 -v gs -gate-to-source voltage (v) t j =25 -i d - drain current(a) v ds > -10v 0 0.1 0.2 0.3 0.4 0.5 12345678 -v gs , gate-to-source voltage (v) i d = -2.1a t j = 25c r ds (on), drain-to-source resistance ( ? ) fig.6 on-resistance variation with temperature v ds = 0 v v gs = 0 v 5 10 10 300 150 100 50 0 20 gate?to?source or drain?to?source voltage (v) c, capacitance (pf) t j = 25 c c oss c iss c rss 250 50 200 ?v gs ?v ds 15
page . 4 march 2,2015-rev.02 PJ2301 characteristic curves fig.7 gate-to-source and drain-to-source vs. total charge fig.8 diode forward voltage vs. current fig.9 resistive switching time variation vs. gate resistance fig.10 drain-to-source leakage current vs. voltage fig.11 thermal response 10 100 1000 10000 2468101214161820 -v ds , drain-to-source voltage (v) -i dss , leakage (na) t j = 75c t j = 100c t j = 150c 0 1 2 3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -v sd , source-to-drain voltage (v) -i s ,source current (a) v gs = 0v t j = 25c r g , gate resistance ( ) t, time (ns) 1 10 100 1000 1 10 100 t d(off) t d(on) t f t r v dd = ?16 v i d = ?2.1 a v gs = ?4.5 v q g , total gate charge (nc) 3 6 9 12 15 0 ?v gs d = ?2.1 a j = 25 c 0 1 2 3 4 5 0123 0 1 2 3 4 5 gs, ?v gate?to?source voltage (v) ?v ds, drain?to?source voltage (v) q gd q gs ?v ds q t 4 i d = ?2.1 a t j = 25 c normalized thermal transient impedance, junction-to-ambient normalized effective transient thermal impedance 2 1 0.1 0.01 10 C4 10 C3 10 C2 10 C1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r = 62.5 c/w 3. t j C t a = p dm z (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 jl jl september 29,2011-rev.01
page . 5 march 2,2015-rev.02 PJ2301 mounting pad layout order information ? packing information t/r - 12k per 13" plastic reel t/r - 3k per 7" plastic reel 0.031 min. (0.80) min. 0.037 (0.95) 0.043 (1.10) 0.078 (2.00) 0.035 min. (0.90) min. 0.043 (1.10) 0.106 (2.70)
page . 6 march 2,2015-rev.02 PJ2301 part no_packing code_version PJ2301_r1_00001 PJ2301_r2_00001 for example : rb500v-40 _ r2 _ 00001 part no. serial number version code means hf packing size code means 13" packing type means t/r packing code xx version code xxxxx packing type 1 st code packing size code 2 nd code hf or rohs 1 st code 2 nd ~5 th code tape and ammunition box (t/b) a n/a 0 hf 0 serial number tape and reel (t/r) r 7" 1 rohs 1 serial number bulk packing (b/p) b 13" 2 tube packing (t/p) t 26mm x tape and reel (right oriented) (trr) s 52mm y tape and reel (left oriented) (trl) l panasert t/b cathode up (pbcu) u forming f panasert t/b cathode down (pbcd) d
page . 7 march 2,2015-rev.02 PJ2301 disclaimer ? reproducing and modifying information of the document is prohibited without permission from panjit international inc.. ? panjit international inc. reserves the rights to make changes of the content herein the document anytime without notification. please refer to our website for the latest document. panjit international inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. ? panjit international inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. ? applications shown on the herein document are examples of standard use and operation. customers are responsible in comprehending the suitable use in particular applications. panjit international inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ? the products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify panjit international inc. for any damages resulting from such improper use or sale. ? ? since panjit uses lot number as the tracking base, please provide the lot number for tracking when complaining.
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